佐治亞大學(xué)MS in Physics語言成績(jī)要求-申請(qǐng)截止時(shí)間-申請(qǐng)材料要求
佐治亞大學(xué)語言成績(jī)要求
指南者留學(xué) 2021-11-22 08:04:07
佐治亞大學(xué)(University of Georgia)MS in Physics是佐治亞大學(xué)(University of Georgia)Department of Physics and Astronomy, Franklin College of Arts and Sciences開設(shè)的專業(yè)。指南者留學(xué)整理收集2020年佐治亞大學(xué)(University of Georgia)MS in Physics申請(qǐng)截止時(shí)間、2020年佐治亞大學(xué)(University of Georgia)MS in Physics語言成績(jī)要求、2020年佐治亞大學(xué)(University of Georgia)MS in Physics申請(qǐng)材料要求供大家參考。
佐治亞大學(xué)(University of Georgia)MS in Physics申請(qǐng)截止時(shí)間
2021-1-15Fall
佐治亞大學(xué)(University of Georgia)MS in Physics語言成績(jī)要求
TOEFL
International applicants from non-English speaking countries need to meet the TOEFL requirement: total score of 80 or above and speaking score of 20 or above.
GRE
Minimum GRE score (combined qunatitative + verbal) of 1050 in the old scoring system. To convert the new GRE score to the old system, use this translation table.
佐治亞大學(xué)(University of Georgia)MS in Physics申請(qǐng)材料要求
PS
A brief essay: describing the applicant's background, interests, goals, aspirations, is required of all applicants.
GPA
Although there is no formal minimum requirement on the grade point average (GPA), an average grade of 'B' or above is usually necessary to be admitted (especially on the core physics courses).
Fee
Unfortunately, because of budget constraints at the University of Georgia, we are unable to offer a waiver of the application fee; applications cannot be processed without the fee.
RL
Three letters of recommendation. Letters of recommendation are now done via the internet, so these will automatically be correctly directed. The essay should also be submitted online.
Transcript
Official transcript (official academic records and certified English translations, if applicable, for international applicants) from each institution of higher education attended. For the initial review, electronic scans are OK, but to be officially admitted, official transcripts have to be submitted to the graduate school later on.